Abstract
Interband transition energies for AlxGa1−xAs layers grown by molecular-beam epitaxy (MBE) techniques have been determined using the electrolyte electroreflectance (EER) technique. The observed data fit quadratic relations for E0, E0+Δ0, E1 and E1+Δ1 to describe variations of energy with composition. Although the x values were not accurately known, the internal consistency of the data is excellent. Given a single bowing parameter we show that accurate values of x can be determined. The EER technique can provide x values with an accuracy better than 0.02 and information on changes in x as small as 0.002. It is thus ideally suited for studying MBE materials.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
