Abstract
Heavily doped P- and N-type polycrystalline silicon conductor stripes were subjected to a high direct current density stress of ∼1×106 A/cm2. It was found that all of the N-type stripes failed near the cathode, whereas all of the P–type stripes failed near the anode, thus pointing out the importance of the sign of the effective mass of the charge carriers in the momentum exchange that leads to electromigration. A model where migration of the dopant is responsible for the observed failures is suggested.
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