Abstract
Dislocations are 1D topological defects with emergent electronic properties. Their low dimensionality and unique properties make them excellent candidates for innovative device concepts, ranging from dislocation-based neuromorphic memory to light emission from diodes. To date, dislocations are created in materials during synthesis via strain fields or flash sintering or retrospectively via deformation, for example, (nano)-indentation, limiting the technological possibilities. In this work, we demonstrate the creation of dislocations in the ferroelectric semiconductor Er(Mn,Ti)O3 with nanoscale spatial precision using electric fields. By combining high-resolution imaging techniques and density functional theory calculations, direct images of the dislocations are collected, and their impact on the local electric transport behavior is studied. Our approach enables local property control via dislocations without the need for external macroscopic strain fields, expanding the application opportunities into the realm of electric-field-driven phenomena.
Highlights
The presence of dislocations transcends condensed matter research and gives rise to a diverse range of emergent phenomena,[1−6] ranging from geological effects[7] to light emission from diodes.[8]
Dislocations are created by strain engineering, predominantly in one of two ways: either strain fields during growth, so that dislocations form to release the strain,[15−17] or postgrowth via applied stress,[18] for example, by nanoindentation.[19−22] strain engineering is a highly efficient tool for creating dislocations, it is challenging to alter the properties of a material exactly via strain fields on the local scale
A scanning electron microscopy (SEM) image of the same region as in Figure 1b is presented in Figure 1c, which demonstrates that the area of enhanced conductance in the conductive atomic force microscopy (cAFM) scan correlates with bright contrast in SEM, associated with an increased yield of secondary electrons
Summary
The presence of dislocations transcends condensed matter research and gives rise to a diverse range of emergent phenomena,[1−6] ranging from geological effects[7] to light emission from diodes.[8]. Dislocations are created by strain engineering, predominantly in one of two ways: either strain fields during growth, so that dislocations form to release the strain,[15−17] or postgrowth via applied stress,[18] for example, by nanoindentation.[19−22] strain engineering is a highly efficient tool for creating dislocations, it is challenging to alter the properties of a material exactly via strain fields on the local scale This is problematic after a material has been implemented into a device architecture. This approach is promising regarding the production of defect-rich samples, but it lacks the nanoscale control required for technological applications.[23]
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