Abstract
The microstructure of GaN(Si)/AlInN multiple quantum wells grown on GaN/Al2O3 (0001) templates by metalorganic vapor-phase epitaxy has been investigated using transmission electron microscopy and associated techniques. Dodecagon-shape V-defects with hexagonal apexes, which nucleate on screw-component threading dislocations, are observed at the film surface. The hexagonal apexes are bounded by {112̱1} planes, whereas the dodecagons are bounded by {101̱1} and {112̱1} planes, where the {101̱1} facets are generated from the edges between adjacent {112̱1} planes. Indium segregation is observed along these edges. A possible reason for formation of these defects is briefly discussed.
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