Characterization of Crack-Free AlN/GaN Multiple Quantum Wells Grown by Metalorganic Vapor Phase Epitaxy Using H2 as a Carrier Gas

Abstract

Crack-free 40 pairs of AlN/GaN multiple quantum wells (MQWs) were successfully grown by metalorganic vapor phase epitaxy using H 2 as a carrier gas. From a 2θ-ω scan XRD profile of the 40-pair AlN/GaN MQWs, satellite peaks from -2nd to +1st were observed, which suggests that the MQWs form abrupt interfaces with good crystal quality. The abrupt interfaces were also confirmed by a cross-sectional transmission electron microscopy. Additionally, an excellent electrical property of the AlN(0.7 nm)/GaN(1.7 nm) MQWs with an electron mobility of 1500 cm 2 /Vs and a sheet electron density of 1.4 x 10 13 cm -2 at room temperature was achieved. This electrical property is also an evidence of the high quality AlN/GaN MQWs.