Abstract
Dark line defects (DLD’s) have been observed in GaP green LED’s under an external mechanical stress. Excitation of minority carriers is essential to DLD formation. DLD is revealed to grow along the 〈110〉 direction and to correspond to an array of dislocation etch pits. A ’’traveling dark spot’’ was observed for the first time. It moves as fast as 1 mm/sec and becomes trapped at the edge of DLD, which results in DLD growing. DLD generation depends on both the forward current magnitude and external stress.
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