Abstract
Generation and development of <100> dark line and dark spot defects (DLD/DSDs), and related increases in room temperature pulse threshold current are investigated on InGaAsP/InP double heterostructure (DH) lasers under 10 kA/cm2 forward current density and (250±25)°C junction temperature operation. The average development speed of <100> DLDs is estimated to be about 0.3 µm/h. Temperature rise is confirmed at DSDs with an infrared thermometer. These dark defects have geometrical correlation with etch pit features in the InGaAsP/InP heteroboundary. They are considered to be developed by carrier injection.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
