Abstract
When divergent X-rays from the source of size below 1 µ are diffracted from Fe-Si (Si 3%) single crystals of about 0.05 mm thickness, a pseudo-Kossel pattern superimposed with the X-ray projection micrograph is obtained. Distortion of absorption lines in the pseudo-Kossel pattern shows the change in orientation or spacing of the crystal planes at their locations on the X-ray projection micrograph. By traversing the X-ray source on a target film, pseudo-Kossel lines change their locations on the X-ray projection micrograph. Thus, two-dimensional stress distribution in the neighborhood of the crystal defect can be revealed. The detectable limit of distortion is about 10-4 in order and the resolution of the X-ray projection micrograph is about 1 µ.
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