Abstract
Cross-sectional potential distribution of a GaN-based field effect transistor with a field-modulating plate has been measured by Kelvin prove force microscopy to investigate the effect of the field-modulating plate on an electric field under high-voltage biasing conditions. The observed potential distribution clearly revealed that the introduction of the field-modulating plate is effective in relaxing the peak electric field intensity at the drain side of the gate edge. Furthermore, the authors experimentally observed that the peak of electric field splits into two positions: drain-side edges of the gate and field-modulating plate electrodes.
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