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Abstract
Conduction electrons introduced by 90 keV Sb ion implantation into SnO2 thin films have been observed in photoemission spectra excited with He(I) (hv = 21.2 eV) radiation. The carrier concentration is smaller than expected from the surface Sb concentration seen in XPS. This is discussed in terms of trapping of electrons in Sb(III)-like lone pair states associated with surface Sb ions.
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