Abstract
Liquid-phase epitaxial growth of InP was performed at constant growth temperature by the temperature difference method under controlled vapor pressure on InP substrates. Growth temperature was kept constant from 550°C to 280°C. The as-grown surface morphology was investigated by Nomarski interference optical microscope and electron microscope. The anisotropic initial growth nuclei are investigated on {0 0 1},{1 1 1}A,B and {1 1 0} oriented InP substrates. This anisotropic behavior is discussed in view of the anisotropy of lateral growth rate due to the preferential surface migration and sticking at specific kinks and steps on the surface.
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