Abstract
We have measured the deep level transient spectroscopy signal height of two DX levels usually observed in n-type doped Al0.32Ga0.68As as a function of the filling pulse width. We report an overshoot in the capture transient of the DX level having a larger capture rate. We solve the rate equations for the capture processes of these two DX levels simultaneously. The capture transients thus obtained fit the experimental capture transients of these two DX levels reasonably well.
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