Abstract
The results of deep level transient spectroscopy measurements of an acceptor-like state of metastable EL2 in GaAs and GaAs0.97P0.03 are presented. The uniaxi al stress in GaAs was applied in order to find the deep leve1 transient spectroscopy signal. It was found that the deep level transient spectroscopy signal depended on the stress direction. In GaΑs0.97P0.03 the deep level transient spectroscopy peak related to an acceptor-like state of metastable EL2 was observed without external stress.
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