Observation of A1(LO), E2(high) and B1(high) phonon modes in Inx Ga1–xN alloys with x = 0.11–0.54

Abstract

AbstractPhonon spectra of A1(LO), E2(high) and B1(high) modes were observed in a series of hexagonal Inx Ga1–xN alloy films (x = 0.11–0.54) by Raman scattering using a deep‐UV laser at 266 nm for excitation. The A1(LO) and E2(high) modes both showed one‐mode type variation with x. The B1(high) mode, which is Raman‐forbidden in ideal binary wurtzite compounds, has been first observed in Inx Ga1–xN alloy in a clear manner. Its frequency variation is in line with a theoretical prediction of one‐mode type behavior. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)