Abstract
We have discovered that the extrinsic photoconductivity spectrum of doped, uncompensated crystalline Si at liquid-helium temperatures is qualitatively different in electric fields E above a critical value E c . Specifically, the red edge of the photoconductivity, associated with photoionization of a neutral impurity, is shifted strongly to lower frequencies. This result is explained by the appearance of a mobility threshold in the D−-band (upper Hubbard band) and the shift of this threshold as E increases.
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