Abstract
The defects in InGaAsP/InP DH LEDs are observed with an infrared line scanner. The dark structure appears before aging and it exists mainly in the form of dark spot defect. The effect of the variety and concentration of the doping forp-InP confining layers on the dark defects is studied. The results show that the percentage of devices with dark defects is much lower for Mg or In−Zn doped devices than for Zn doped devices. It is believed that Zn is one of the important origin for the formation of dark defects. The growth rate of dark defects is studied both at room temperature and at 70–85°C. The results show that after agin for 15000 h at room temperature there are no dark defects newly appeared. But after aging for 2000 h at 70–85°C some devices show newly formed dark structure with very slow growth rate.
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