Abstract
The electrical properties of oxides grown on 3C-SiC by rapid thermal processing in various oxidizing and annealing atmospheres are investigated using a quasi-static method. According to the anomalous capacitance hump, the existence of two types of traps, interface and near interface oxide traps, is observed in quasi-static. By monitoring the sweep-rate measurement of the quasi-static current related to electron tunneling from interface traps to near-interface oxide traps, a profile of the traps in response time can be obtained. Based on the extracted parameters of the carrier traps, we demonstrate that the near SiO 2/3C-SiC interface is significantly improved when using 100% N 2O compared to 100% O 2 or even N 2–O 2 dilution as oxidizing gas. Also, we show that incorporating N 2 during the oxidation in O 2 is not favourable for the reduction of the near-interface oxide traps.
Published Version
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