Observation and Analysis of a Non-Uniform Avalanche Phenomenon in 4H-SiC 4°-Off (0001) p-n Diodes Terminated with a Floating-Field Ring

Abstract

4H-SiC (0001) p-n diodes terminated with a floating-field ring were found to emit light at breakdown in the opposite direction to that of substrate misorientation when the diodes were fabricated by aluminum implantation and dry-oxidation passivation. Two-dimensional simulation revealed that such non-uniform breakdown was mainly attributable to the asymmetric lateral straggling of implanted aluminum acceptors, rather than the anisotropic nature of the impact ionization coefficient.