Abstract
We describe a device for inter-chip or intra-chip optical communications that contains the Circular Defect in photonic crystal (CirD) lasers array driven by vertical current injection. In order to improve the conductivity of the structure while also preventing current leakage, we introduce the oblique deposition of electrodes on a photonic crystal pattern by using an electron beam evaporation apparatus. The performance of an electrode is investigated by a transmission line method, and the CirD structure is fabricated with the electrode. We analyze the voltage-current relationship and confirm the CirD structure’s low resistance of under 1 kΩ.
Highlights
As the amount of information circulating in the world increases rapidly, the traditional electronic circuits are beginning to show their shortcomings, such as the limits of transmission capacity, enormous energy consumption, and heat generation in data centers
We previously proposed a laser diode with Circular Defect in photonic crystal (PhC) (CirD) [4,14,15,16]
19 air holes in a hexagonal area were removed from the triangular PhC lattice, and 18 peripheral air holes were arranged in a ring shape
Summary
As the amount of information circulating in the world increases rapidly, the traditional electronic circuits are beginning to show their shortcomings, such as the limits of transmission capacity, enormous energy consumption, and heat generation in data centers. We previously proposed a laser diode with Circular Defect in PhC (CirD) [4,14,15,16] In this device, 19 air holes in a hexagonal area were removed from the triangular PhC lattice, and 18 peripheral air holes were arranged in a ring shape. By the adjusting thethe radius the CirD cavity, the resonant of the WGM of can modulated. Twenty CirD cavities with different lasing wavelengths are are arranged on both sides a single. Each cavity is surrounded by more than ten PhC lattice periods except for the direction to to the waveguide, which provides sufficient horizontal light confinement. GaAs contact diffuse, all of the cavities must be electrically isolated for independent operations. Madeisby selectively etchingetching the GaAs layer onlayer the AlGaO cavity, a current blocking trenchis(CBT). According the rate equation calculations [4,7,17], a single laser CirD can belaser directly chip bonding method [4].toAccording to the rate equation calculations [4,7,17], a single can modulated at a rate ofat
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