Abstract
A circular defect in 2D photonic crystal (CirD) lasers is developed, which has the potential to achieve a target communication density of 10 Pbps cm−2 for intrachip optical communications by vertical current injection. The AlGaOx cladding layer's oxidation width strongly influences the device's light confinement and electronic resistance. Herein, samples with different oxidation widths are fabricated and the relationship between threshold power and oxidation width through photoexcitation is revealed. The optimal range of the oxidation width is found to be 349–439 nm, which can ensure low electronic resistance and low threshold power.
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