Abstract
The O-dimensional (O-D) confinement of the photocarriers in self-assembled InGaAs/GaAs or AlInAs/AlGaAs quantum dots (QDs) produces sharp emission lines in the infrared or the visible respectively. This is observed in photoluminescence of ensembles containing a few hundreds QDs, ~ 18 nm in diameter, prepared by etching μm-size mesas in QD sample grown by the spontaneous island formation during molecular beam epitaxy. By imaging similar sharp lines obtained in cathodoluminescence (CL) experiments, the emission of single QDs is spatially resolved. We also present results demonstrating the energy selectivity and the large interlevel spacing associated with the O-D confinement in these ultrasmall defect-free QDs.
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