Numerical study on the effect of operating parameters on point defects in a silicon crystal during Czochralski growth II. Magnetic effect

Abstract

This study aimed to find the relationship between the strength of the magnetic field and the density of point defects in a silicon crystal in a cusp-shaped magnetic Czochralski process. Vacancy and self-interstitial point defects were adopted as point defects. The strength of the field was changed from 0.15 to 0.3 T while the crucible and crystal rotational rates were fixed to 8 and −18 rpm, respectively. It was found that the strength of the field significantly affected the melt motion in the crucible, resulting in large change in the density of the point defects of the crystal.