Numerical Study on Effect of Side Insulation Movement in the Multi-crystalline Silicon Growth Process

Abstract

Numerical simulation is the best tool to understand and optimize the directional solidification (DS) process to grow good quality multi crystalline silicon (mc-Si) ingot for PV application. We have numerically investigated the effect of side insulation lifting distance. Here the mc-Si ingot was grown for four different heights of side insulation movement, such as 50, 100, 150 and 160 mm height from the bottom insulation. During the solidification process, the side insulation is lifted at constant velocity, 0.1 mm/min. which was fixed at four heights for four different processes till the end of solidification. From the investigations lower maximum thermal stress, lower maximum shear stress, lower dislocation rate and convex isothermal lines were obtained at the side insulation lifting distance of 150 mm.