Abstract
Numerical study of Fermi surface has been done using one-band Hubbard model with exact diagonalization method to study the effect of doping factor on Charge Density Wave (CDW) development in Anti ferromagnetic Mott Insulator (AFM) and pseudogap region in cuprate material. In this study the effect of CDW is characterized by Fermi Surface Nesting (FSN) vector in which it might be formed in pseudogap region. The wavelength of CDW increases when the value of disorder, which is representing the doping level in cuprate material, is increased. However, the CDW pattern will dissapear as the doping reaches the value which represented by Hubbard parameters: t = 1 eV, U = 4 eV, µ = 2 eV, and vi = -6 eV, marked by the decreasing of charge density wavelength.
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