Abstract
High-frequency operation of nonplanar and planar InP/InGaAs heterojunction bipolar transistors (HBTs) with various collector doping profiles has been investigated using a Monte Carlo particle simulation. It is shown that vertical scaling of the collector does not provide a substantial improvement in HBT overall speed performance due to the dramatic increase in the collector capacitance charging time with decreasing collector layer thickness. A considerable improvement in HBT high-frequency performance has been obtained in HBTs with buried subcollector and nonuniform collector doping profile.
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