Numerical Study of CiS Solar Cell with CuInSe2‐Undoped Layer

Abstract

Herein, a CuInSe2 thin film solar cell with an intrinsic thin layer (HIT) is modeled and simulated using SCAPS. The HIT is deposited between a thin CdS window layer of reduced thickness of 20 nm to minimize cadmium toxicity and an absorbing layer of variable thickness. The aim is to study the influence of the thickness of absorber and HIT layer, level doping and defect densities of CuInSe2 layer, and high work function (between 5 and 5.6 eV) effect on performance parameters of the solar cell. In general, a significant increase in efficiency is observed. The HIT and the absorber thicknesses are optimized to be 0.3 and 0.5 μm, respectively. A conversion efficiency of 24.2%, a V oc of 0.78 V, J sc of 45.4 mA cm−2, and an FF of 68.3% are obtained for the proposed AZO/ZnO/CdS/CuInSe2/Mo/glass. These simulation results encourage using intrinsic thin layers in CIS solar cell structure.