Abstract

In this paper, we present an analytical study of the impact of light trapping and multilayer antireflection coating (ARC) on the electrical characteristics of n(a-Si:H)/i(a-Si:H)/p(c-Si)/p+(C-Si) heterojunction solar cells with intrinsic thin layer (SHJ). The developed analytical model considers a triangular texture morphology of the solar cell top surface and a double ARC layer. This model serves as a fitness function to optimize the device reliability against the interfacial traps using Grey Wolf optimization approach (GWO). The optimized solar cell reveals a high short circuit current ISC = 47.9 mA, an open circuit voltage VOC = 0.56 V, fill factor FF = 74.72% and a conversion efficiency improvement in the order of 30% over conventional planar solar cells efficiency. Not only the optimized SHJ solar cell exhibits higher performance in terms of figure of merits, but also shows superior interfacial traps reliability at the amorphous/crystalline interface. This reliability enhancement is due to a better surface texture control and intrinsic thin film layer tuning provided by GWO approach.

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