Numerical study of barrier height enhancement in n‐In 0.35 Ga 0.65 As Schottky diodes using a p‐type near‐interface layer

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We have simulated electrical characteristics of n-type In0.35Ga0.65As Schottky diodes with a thin p-type layer at the surface. By a numerical solution of Poisson and drift-diffusion equations I–V and C–V curves of model structures have been calculated. The diode parameters, such as barrier height and ideality factor and the influence of the p-type layer thickness on them, were evaluated and compared with the published data in literature. The barrier height increases continuously with the thickness of the p-type layer. The worsening of the ideality factor is shown not to be detrimental for the device performance. For greater p-type layer thicknesses, however, the diode ceases to be a majority type device because minority carriers as part of the total current start to increase and the device should no more be considered as a majority type one.