Numerical simulations of a novel CH3NH3PbI3 based double-gate dopingless tunnel FET

Abstract

Tunnel field effect transistors (TFETs) are generating considerable interest in switching applications due to their steep-subthreshold slope achieved by the quantum mechanical tunneling as a switching mechanism. However, all TFET structures currently in vogue based on Si, Ge or III–V materials have not been able to satisfy the other stringent requirements like higher on current (I ON) and low cost of fabrication. We, in this paper, report a cost-effective, organic–inorganic hybrid perovskite CH3NH3PbI3 material-based DG–DL TFET (labeled as MAPbI3–DG–DL TFET hereinafter) which has been shown to adapt to the advantages of the double gate (DG) and doping less (DL) technique for better electrostatic control and low thermal budget respectively. In simulations conducted using Silvaco Atlas tool at room temperature and supply voltage of 1 V on the proposed device structure, we have been able to achieve subthreshold swing of 27.33 mV decade−1, cut-off frequency of 0.268 THz and switching ratio of 1.85 × 1011. Detailed explanations of the results provided in the paper tend to establish that MAPbI3–DG–DL TFET could be a suitable candidate for low-power and high-speed logic applications.