Abstract
The transient photoconductivity (TPC) in hydrogenated amorphous silicon is studied bynumerical simulation. In addition to normal free carrier capture (emission) transitions into(from) localized states by the multiple-trapping (MT) process, we include theprocess of electron hopping (EH) through the conduction band tail states. Thedistribution of the dangling bond density is calculated by the defect pool model, whileexponential distributions are assumed for the conduction and valence band tails.The simulation results are in good agreement with previous theoretical results: ahopping transport energy level identified as the peak of the energy distribution ofthe hopping photoconductivity is in excellent agreement with the theoreticalhopping transport energy of Monroe. The simulated TPC is studied as a functionof temperature in order to determine the relative contribution of MT and EHtransport mechanisms. A smooth transition around 130 K between high temperatureextended-state conduction via MT and low temperature localized-state EH isdetermined.
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