Abstract
Stratton's energy balance model for nonlocal charge transport in semiconductors is extended to include the effects of heterojunctions and lattice heating. The extended model is implemented in a general purpose 2D device simulator. Calculated results are presented for three device types and each of four models. The devices are a silicon BJT, a silicon SOI transistor, and a GaAs/AlGaAs HBT. The models are isothermal drift-diffusion, nonisothermal drift-diffusion, isothermal energy balance, and nonisothermal energy balance. Analysis of these results provides detailed insights into the impact of the coupling between carrier transport and lattice heating.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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