Representation of the solution to a model problem in semiconductor physics

Abstract

We study a mixed type problem for the Poisson equation arising in the modeling of charge transport in semiconductor devices [V. Romano, 2D simulation of a silicon MESFET with a non-parabolic hydrodynamical model based on the maximum entropy principle, J. Comput. Phys. 176 (2002) 70–92; A.M. Blokhin, R.S. Bushmanov, A.S. Rudometova, V. Romano, Linear asymptotic stability of the equilibrium state for the 2D MEP hydrodynamical model of charge transport in semiconductors, Nonlinear Anal. 65 (2006) 1018–1038]. Unlike well-studied elliptic boundary-value problems in domains with smooth boundaries (see, for example, [O.A. Ladyzhenskaya, N.N. Uralceva, Linear and Quasilinear Elliptic Equations, Nauka, Moscow, 1973; D. Gilbarg, N.S. Trudinger, Elliptic Partial Differential Equations of Second Order, Springer-Verlag, Berlin, 1983]), our problem has two significant features: firstly, the boundary is not a smooth curve and, secondly, the type of boundary conditions is mixed (the Dirichlet condition is satisfied on the one part of the boundary whereas the Neumann condition on the other part). The well-posedness of the problem in Hölder and Sobolev spaces is proved. The representation of the solution to the problem is obtained in an explicit form.