Abstract
In this work, a convergent monotone iterative system based on finite difference approximations is proposed to solve numerically a novel porous silicon formation model. This model includes chemical, physical and electrical processes involved in the porous growth and is formulated as a weakly coupled parabolic partial differential system. Important properties like nonnegativity, boundedness, stability and convergence of the numerical solution are demonstrated by means of the upper and lower solutions technique. The computational porous silicon formation model is validated by experimental evidence. Numerical simulations of the porous silicon morphology in two dimensions are shown along with the effects of parameters variation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Communications in Nonlinear Science and Numerical Simulation
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
