Abstract
The operation of solar cells based on GaAs p-i-n GaAs is investigated via numerical simulation using "SCAPS-1D. This involves optimizing certain physical and geometric parameters of these cells to increase their performance under standard conditions. The simulation was carried out on a "p-i-n" solar cell based on GaAs by studying several parameters, namely; the effect of the thickness of each layer of the PV cell, the impact of doping on the values of the open-circuit voltage (Voc) and short-circuit current density (Jsc), as well as conversion efficiency and fill factor (FF). The obtained results show that the behavior of the solar cells studied is directly related to the temperature and to the thickness of the intrinsic layers. In fact, the optimal parameters for high performance are: Voc= 0.85 V, Jsc= 24.52 mA/cm2, FF= 85,70 % and ƞ=21.05 %.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
