Year-end Sale % OFF 
Abstract
In this work, the crystal growth of multi-crystalline silicon (mc-Si) during the directional solidification process was studied using the cellular automaton method. The boundary heat transfer coefficient was adjusted to get a suitable temperature field and a high-quality mc-Si ingot. Under the conditions of top adiabatic and bottom constant heat flux, the shape of the crystal-melt interface changes from concave to convex with the decrease of the heat transfer coefficient on the side boundaries. In addition, the nuclei form at the bottom boundary while columnar crystals develop into silicon melt with amzigzag-faceted interface. The higher-energy silicon grains were merged into lower energy ones. In the end, the number of silicon grains decreases with the increase of crystal length.
Highlights
Multi-crystalline silicon is a very useful material owing to its excellent integrated properties [1]
The calculation of the macrocosmic temperature field is mainly based on the finite difference method and heat diffusion equation, while the calculation of microcosmic temperature is based on the temperature of macrocosmic node and the position of microcosmic node in macrocosmic scale
A suitable temperature field may decrease the defects in silicon ingot and increase the quality of silicon wafers
Summary
Multi-crystalline silicon (mc-Si) is a very useful material owing to its excellent integrated properties [1]. Anisotropy, faceting, and twining are important features in the crystal growth of many materials, and they cannot be overlooked when studying the microscopic growth mechanism of silicon. The phase-field method is a good method for the study of crystal micro-growth, but it is important to calculate the efficiency of computation and cannot simulate large-scale crystal growth. Mesoscale simulation combining the cellular automation and finite difference or finite element methods, which is widely used in metal casting to simulate crystal growth and crystal grain structures, efficiently bridges the gap between micro- and macroscopic scale method. Modeling technique to simulate silicon grain growth They ignored the effect of anisotropy on silicon crystal growth in the calculation model, and compared the simulation results with real ingot grain structures [15]. We employed the CA method to study the process of mc-Si grain growth, including the effect of temperature field, nucleation, columnar zone growth and grain competition
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
