Numerical simulation of hole transport in silicon nanostructures

Abstract

In order to study the trade-off between accuracy and computational costs in p-type device simulation, we have simulated hole transport in one-dimensional Si p+pp+ structures within a nonequilibrium Green’s function formalism combining with three different types of methods for band structure calculation; an empirical sp3d5s* tight-binding method, k⋅p two-band approximation, and effective-mass approximation.