Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. I. Homogeneous transport

Abstract

Monte Carlo simulations of electron transport in seven semiconductors of the diamond and zinc-blende structure (Ge, Si, GaAs, InP, AlAs, InAs, GaP) and some of their alloys (Al/sub x/Ga/sub 1-x/As, In/sub x/Ga/sub 1-x/As, Ga/sub x/In/sub 1-x/P) and hole transport in Si were performed at two lattice temperatures (77 and 300 K). The model uses band structures obtained from local empirical pseudopotential calculations and particle-lattice scattering rates computed from the Fermi golden rule to account for band-structure effects. Intervalley deformation potentials significantly lower than those which have been previously reported are needed to reproduce available experimental data. This is attributed to the more complicated band structures, particularly around the L- and X-symmetry points in most materials. Satisfactory agreement is obtained between Monte Carlo results and some experiments. >