Abstract

In this work, the planar heterojunction-based perovskite solar cells have been simulated with the program SCAPS. The structure of the simulated device is n-type TiO<inf>2</inf>/Intrinsic-CH<inf>3</inf>NH<inf>3</inf>Pb<inf>3</inf> (MAPBI<inf>3</inf>)/ p-type spiro-OMeTAD. For making our model more practical, we have inserted interface layer between the junction of MAPBI<inf>3</inf>/ spiro-OMeT AD and MAPBI<inf>3</inf>/TiO<inf>2</inf>. Thickness of the absorber layer (MAPBI<inf>3</inf>) is very crucial for device optimization. We have also analyzed the effect of the different defect in the bulk and at the interface of the perovskite layer. Simulation results indicate that owing to the low defect density combined with superior absorption coefficient, perovskite solar cells can exhibit both high Voc and Jsc values. We have found that the type and the thickness of the absorber layer plays very important part in the functioning of the pervoskite solar cell and shows direct effect on Jsc, FF, Voc. It can be concluded from the simulation study that the 1000 nm thin perovskite layer can be use for photovoltaic device application with less defect in the bulk and at the interface as well.

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