Numerical simulation of high-speed AIIIBV photodetectors within drift-diffusion approximation

Abstract

This paper is focused on a fundamental scientific and technical problem of research and development of high-performance on-chip interconnections for next-generation integrated devices of micro-, nano- and microwave electronics. Previously we proposed an injection laser with functionally integrated optical modulator and double heterostructure, which can be used as an efficient source of light for on-chip optical interconnections. To detect short laser pulses generated by the laser-modulator, a high-speed and technologically compatible photodetector is required. In this paper we develop the non-stationary drift-diffusion model of transient processes in high-speed photodetectors, algorithms of its numerical implementation and applied software intended for one- and two-dimensional simulation of photosensitive optoelectronic devices with various structures. According to the obtained results of drift-diffusion numerical simulation, it is reasonable to research the methods of carrier lifetime reduction in the active regions of photodetectors for on-chip optical interconnections.