Abstract
This paper is aimed at the solution of the fundamental scientific and technical problem of research and development of high-performance optoelectronic devices designed for on- and inter-chip optical interconnecting in integrated circuits. Previously, we developed a laser with a double AIIIBV nanoheterostructure and a functionally integrated optical modulator. The device is based on the principle of controlled spatial relocation of charge carrier density peaks within quantum regions and provides the generation of optical signals with high modulation frequencies. The detection of short laser pulses generated by the lasermodulator requires a technologically compatible on-chip photodetector with subpicosecond response time. To meet the given requirements, we propose a novel design of a high-speed photodetector that employs the same relocation principle as the laser-modulator. The photodetector contains a traditional p-i-n photosensitive structure and an orthogonally oriented control heterostructure. During the back edge of a laser pulse, the control heterostructure displaces the peaks of electron and hole densities into special low-temperature-grown regions with short lifetimes and low carrier mobilities. We developed the quantum mechanical numerical model of the photodetector with controlled relocation of carrier density peaks and estimated the duration of the photocurrent back edge.
Highlights
An optoelectronic approach is aimed at the constructive and technological integration of optical interconnections with available and future hardware components of semiconductor electronics [4,5,6]
The laser-modulator applies the principle of the controlled spatial relocation of charge carrier density peaks within quantum regions of valence and conduction bands [10] for the generation of amplitude- or frequency-modulated optical signals
According to the results of numerical simulation, the peak modulation frequency of the lasers-modulators reaches the value of 1 THz and above
Summary
The application of metal conductors is a traditional way of inter-element and inter-chip connecting in integrated circuits (ICs). Due to the physical scaling limits of traditional metal conductors, the development of next-generation interconnections for ICs is becoming an urgent problem. Other methods are not so cardinal, and they are intended for the modification and optimization of traditional connecting techniques Both approaches have advantages and disadvantages, and it is impossible to note the most preferable one. The laser-modulator applies the principle of the controlled spatial relocation of charge carrier density peaks within quantum regions of valence and conduction bands [10] for the generation of amplitude- or frequency-modulated optical signals. Slow transients in the power circuit do not limit the peak modulation frequency of the device This parameter is determined by the inertness of controlled relocation of carrier density maximums between the quantum wells of heterostructures. The development of a fundamentally new photosensitive device is required
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