Abstract

The numerical simulation is a crucial approach for optimization of different architectures of solar cells. Currently, there is an explicit demand of device design and numerical simulation associated to the thin film solar cells. In order to taper the scope and bridge this research gap, the optimization of absorber layer thickness is undertaken employing SCAPS-1D software. Herein, device designing and numerical simulation to the CdSe/ZnTe based hetero-junction solar cell bearing device architecture of glass/FTO/ZnTe/CdSe/Ag is undertaken. The thickness of CdSe absorber layer is varied from 1 μm to 5 μm with an interval of unity. The findings revealed that better performance comprising Vocof 698 mV, Jscof 3.0689 mA/cm2, FF of 82.76% and power conversion efficiency of 1.79% is predicted for absorber layer thickness of 5 μm. The quantum efficiency of more than 60% is observed in lower wavelength region for devices having higher absorber thickness. It could be believed that present concise study on CdSe/ZnTe hetero-junction solar cells would provide novel road map and withdraw the attention of researchers for development of facile devices.

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