Abstract
In this paper, SCAPS-1D simulation program is used to calculate the effect of layers thickness of Mo/CdTe/CdS/ITO device on the solar cell performance parameters (short-circuit current density Jsc, open-circuit voltage Voc, fill factor efficiency FF%, and cell efficiency η%). SCAPS-1D numerical simulation results show a significant effect of the absorber layer thickness on the device performance. An optimal absorber layer thickness has been achieved. The variation in CdS (buffer) layer thickness shows no observable effect in the values of FF% and Voc values, while a significant effect has been observed in the values of Jsc, and η%. There is no observable change in the device performance parameters with variation in the ITO (window) layer thickness. The Quantum efficiency percentage has been also affected both by the absorber and by the buffer layers thickness to a limit. The QE% achievement has been consistent with the optimal layer thickness.
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