Numerical simulation of carrier gas effects on flow field, species concentration and deposition rate in the chemical vapor deposition of carbon

Abstract

A 2D numerical model was established for simulating the chemical vapor deposition (CVD) of carbon in a vertical reactor. A full multi-component diffusion model was proposed to describe the diffusion of the gas species. The effects of Ar, N2or H2 carrier gases on the flow field, species concentration and deposition rate of pyrocarbon were investigated using C3H6 as the carbon source. Results show that H2 improves the stability of the gas flow. The concentration distributions of CH4, C2H2, C2H4 and C6H6 are uniform in H2. The pyrocarbon deposition rate is lowered, but the uniformity of deposition is improved when H2 is used as the carrier gas compared with N2 or Ar. The simulation results agree well with the experimental ones.