Abstract
In this study, three kinds of electron-blocking layer (EBL) in blue InGaN light-emitting diodes (LEDs) are investigated numerically. They are conventional AlGaN EBL, AlInGaN EBL and gradual Al and In composition p-AlInGaN EBL. Through the analysis of the output power, internal quantum efficiency, turn-on voltage, energy band diagrams, carrier current densities and radiative recombination rates, we have got the simulation results that the LED with gradual Al and In composition p-AlInGaN EBL exhibits a higher output power, a lower electron leakage, a better hole injection efficiency and a more peaceable efficiency droop than the LED with a conventional AlGaN EBL or with a AlInGaN EBL.
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