Abstract
We have numerically simulated gate tunneling current in MOS capacitors. Price has demonstrated that the Gamow formulation can be applied to analysis of the escape of electrons from channel into gate in MOSFETs [P.J. Price, Appl. Phys. Lett., 82, 2080 (2003)]. We have integrated the Gamow method into a Schrodinger-Poisson solver for metal-gate and poly-Si-gate n-type MOS capacitors. The numerical results of the tunneling current are then compared with experimental results.
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