Abstract
Photodetectors (PD) are optoelectronic devices that can convert optical signal into electrical signals via the photoelectric effect. A model of CsSn0.5Ge0.5I3 based nip perovskite photodetector (PePd) with graphene oxide (GO) as electron transport material (ETM) and carbazole unit with naphthalene (Cz-N) is used as hole transport material (HTM) are established. The device configuration was analysed using solar cell capacitance simulator-1 dimensional (SCAPS-1D). The effects of absorber thickness, defect density of CsSn0.5Ge0.5I3, metal work function and operating temperature on device architecture have been investigated. For the incident light between 800-820 nm, a maximum responsivity and detectivity 0.65 A/W and 3.6×1013 Jones are obtained respectively. This simulation results will assist in the future research on high-performance lead-free perovskite photodetectors.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
