Abstract
Abstract Charge transfer is the main mechanism for the detection of gas interaction on semiconductor materials surfaces. We have used the Wolkenstien theory of adsorption instead of the conventional Langmuir isotherm for oxygen gas adsorption has been used in this paper. A numerical model of chemisorption of oxygen gas at the surface of semiconductor gas sensor is presented in this paper. Using this method, we can quantitatively calculate the effect of oxygen adsorption on various electronic properties of the n-type CdS semiconductor such as chemisorbed induced surface potential and work function. In the presented work we have numerically calculated the effect of ambient oxygen gas pressure on the surface potential of n-type CdS semiconductor. The simulation of surface coverage of chemisorbed species has been simulated as a function of oxygen gas pressure, Temperature and bulk doping level of n-type CdS.
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