Abstract
High performance heterojunction transistors are expected from a InP/InGaAs system owing to the electrical properties of these materials. In order to understand the physical mechanisms which control the behaviour of this kind of transistor, a numerical device model has been developed. This model combines drift-diffusion transport in the bulk regions with tunnelling and thermionic emission at the base-emitter interface. The electrical characteristics of the above HBT are analysed using this model. The collector current is dominated by tunnelling transmission through the spike appearing in the conduction band. The base current is dominated by recombination in the base bulk region, but tunnelling transport has an additional effect on this current. The maximum unity-grain frequency is limited by the base transit time.
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