Abstract
In this paper, a numerical model allows to analyze the photovoltaic parameters according to the electronic properties of InxGa1−xN/GaN MQW solar cells under the effect of temperature, the number of quantum wells and indium composition. The numerical investigation starts from the evaluation through the finite difference (FDM) simulation of the self-consistent method coupled with the photovoltaic parameters taking into account the effects of the spontaneous and piezoelectric polarization. The results found were consistent with the literature. As expected, the temperature had a negative impact on the performance of InGaN/GaN MQW solar cells. However, increasing the number of quantum wells improves cell performance. This positive impact further improves with the increase in the indium rate. The obtained results were 28 mA/cm2 for the short-circuit current density, 1.43 V for the open-circuit voltage, and the obtained conversion efficiency was 31% for a model structure based on 50-period InGaN/GaN-MQW-SC under 1-sun AM1.5G.
Highlights
The excellent material properties make III-V semiconductors attractive for applications in optoelectronics [1] and advantageous for the manufacture of solar cells at high performance
-band The dependence of the open circuit versus the temperature
This shift is caused the reduction of thelevel bandwere gap calculated at high temperatures
Summary
The excellent material properties make III-V semiconductors attractive for applications in optoelectronics [1] and advantageous for the manufacture of solar cells at high performance. InGaN alloys have many promising characteristics for photovoltaic applications, such as tunable direct band gap ranging from the visible to ultraviolet spectrum, and the large absorption coefficient [2]. InGaN alloys have the advantages of high carrier mobility, high absorption coefficient and excellent thermal/radiation resistance. These characteristics contribute to the achievement of highly efficient solar cells for potential use at elevated temperatures [3,4]. Thanks to the high efficiency of their solar cells, InGaN/GaN multiple quantum well (MQW) heterostructures have been extensively studied, through the variation of different parameters
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