Abstract

The use of three different indium (In) compositions in InxGa1−xN quantum wells (QWs) with staggered geometry is proposed to improve the photovoltaic properties of InGaN/GaN multiple quantum well solar cell (MQWSC). Improved lattice matching at the last QW and p-GaN interface along with staggered QWs leads to an increase in short circuit current density, resulting in an overall 45% enhancement in efficiency as compared to reference cell. The optimized MQWSC with staggered QWs solar cell shows a fill factor (FF) of 0.68 and efficiency of 1.21% under AM1.5G illumination.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.