Abstract
The use of three different indium (In) compositions in InxGa1−xN quantum wells (QWs) with staggered geometry is proposed to improve the photovoltaic properties of InGaN/GaN multiple quantum well solar cell (MQWSC). Improved lattice matching at the last QW and p-GaN interface along with staggered QWs leads to an increase in short circuit current density, resulting in an overall 45% enhancement in efficiency as compared to reference cell. The optimized MQWSC with staggered QWs solar cell shows a fill factor (FF) of 0.68 and efficiency of 1.21% under AM1.5G illumination.
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